The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2012
Filed:
Aug. 12, 2010
Hsin Chang Lin, Hsinchu County, TW;
Chia-hao Tai, Hsinchu County, TW;
Yang-sen Yen, Hsinchu County, TW;
Ming-tsang Yang, Hsinchu County, TW;
Ya-ting Fan, Hsinchu County, TW;
Hsin Chang Lin, Hsinchu County, TW;
Chia-Hao Tai, Hsinchu County, TW;
Yang-Sen Yen, Hsinchu County, TW;
Ming-Tsang Yang, Hsinchu County, TW;
Ya-Ting Fan, Hsinchu County, TW;
Yield Microelectronics Corp., Hsinchu County, TW;
Abstract
A low-voltage EEPROM array, which has a plurality of parallel bit lines, parallel word lines and parallel common source lines is disclosed. The bit lines include a first bit line. The word lines include a first word line and a second word line. The common source lines include a first common source line and a second common source line. The low-voltage EEPROM array also has a plurality of sub-memory arrays. Each sub-memory array includes a first memory cell and a second memory cell. The first memory cell connects with the first bit line, the first common source line and the first word line. The second memory cell connects with the first bit line, the second common source line and the second word line. The first and second memory cells are symmetrical and arranged between the first and second common source lines.