The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2012
Filed:
Mar. 16, 2010
Applicants:
Tao-wen Chung, Zhubei, TW;
Po-yao KE, Dashe Township, TW;
Shine Chung, San Jose, CA (US);
Fu-lung Hsueh, Cranbury, NJ (US);
Inventors:
Tao-Wen Chung, Zhubei, TW;
Po-Yao Ke, Dashe Township, TW;
Shine Chung, San Jose, CA (US);
Fu-Lung Hsueh, Cranbury, NJ (US);
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A first terminal and a second terminal of a FinFET transistor are used as two terminals of an anti-fuse. To program the anti-fuse, a gate of the FinFET transistor is controlled, and a voltage having a predetermined amplitude and a predetermined duration is applied to the first terminal to cause the first terminal to be electrically shorted to the second terminal.