The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 06, 2012

Filed:

Jul. 14, 2010
Applicants:

Han-guan Chew, Singapore, SG;

Ming Zhu, Singapore, SG;

Lee-wee Teo, Singapore, SG;

Harry-hak-lay Chuang, Hsinchu, TW;

Inventors:

Han-Guan Chew, Singapore, SG;

Ming Zhu, Singapore, SG;

Lee-Wee Teo, Singapore, SG;

Harry-Hak-Lay Chuang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract

The disclosure relates to integrated circuit fabrication, and more particularly to an interconnection structure for N/P metal gates. An exemplary structure for an interconnection structure comprises a first gate electrode having a first portion of a first work-function metal layer under a first portion of a signal metal layer; and a second gate electrode having a second portion of the first work-function metal layer interposed between a second work-function metal layer and a second portion of the signal metal layer, wherein the second portion of the signal metal layer is over the second portion of the first work-function metal layer, wherein the second portion of the signal metal layer and the first portion of the signal metal layer are continuous, and wherein a maximum thickness of the second portion of the signal metal layer is less than a maximum thickness of the first portion of the signal metal layer.


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