The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2012
Filed:
Feb. 08, 2010
Ming Zhu, Singapore, SG;
Lee-wee Teo, Singapore, SG;
Han-guan Chew, Singapore, SG;
Harry Hak-lay Chuang, Hsinchu, TW;
Ming Zhu, Singapore, SG;
Lee-Wee Teo, Singapore, SG;
Han-Guan Chew, Singapore, SG;
Harry Hak-Lay Chuang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure provides a semiconductor device having a transistor. The transistor includes a substrate and first and second wells that are disposed within the substrate. The first and second wells are doped with different types of dopants. The transistor includes a first gate that is disposed at least partially over the first well. The transistor further includes a second gate that is disposed over the second well. The transistor also includes source and drain regions. The source and drain regions are disposed in the first and second wells, respectively. The source and drain regions are doped with dopants of a same type.