The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2012
Filed:
Feb. 17, 2011
Ben-li Sheu, Sunnyvale, CA (US);
Rajinder Dhindsa, San Jose, CA (US);
Vinay Pohray, Pleasanton, CA (US);
Eric A. Hudson, Berkeley, CA (US);
Andrew D. Bailey, Iii, Pleasanton, CA (US);
Ben-Li Sheu, Sunnyvale, CA (US);
Rajinder Dhindsa, San Jose, CA (US);
Vinay Pohray, Pleasanton, CA (US);
Eric A. Hudson, Berkeley, CA (US);
Andrew D. Bailey, III, Pleasanton, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for etching features in an etch layer. A conditioning for a patterned pseudo-hardmask of amorphous carbon or polysilicon disposed over the etch layer is provided, where the conditioning comprises providing a fluorine free deposition gas comprising a hydrocarbon gas, forming a plasma from the fluorine free deposition gas, providing a bias less than 500 volts, and forming a deposition on top of the patterned pseudo-hardmask. The etch layer is etched through the patterned pseudo-hardmask.