The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 30, 2012

Filed:

Sep. 14, 2010
Applicants:

Satoru Takasawa, Sammu, JP;

Satoru Ishibashi, Sammu, JP;

Tadashi Masuda, Tomisato, JP;

Inventors:

Satoru Takasawa, Sammu, JP;

Satoru Ishibashi, Sammu, JP;

Tadashi Masuda, Tomisato, JP;

Assignee:

Ulvac, Inc., Chigasaki-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/01 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A metallic wiring film, which is not exfoliated even when exposed to plasma of hydrogen, is provided. A metallic wiring film is constituted by an adhesion layer in which Al is added to copper and a metallic low-resistance layer which is disposed on the adhesion layer and made of pure copper. When a copper alloy including Al and oxygen are included in the adhesion layer and a source electrode and a drain electrode are formed from it, copper does not precipitate at an interface between the adhesion layer and the silicon layer even when being exposed to the hydrogen plasma, which prevents the occurrence of exfoliation between the adhesion layer and the silicon layer. If the amount of Al increases, since widths of the adhesion layer and the metallic low-resistance layer largely differ after etching, the maximum addition amount for permitting the etching to be performed is the upper limit.


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