The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 30, 2012

Filed:

Nov. 06, 2009
Applicants:

Griselda Bonilla, Hopewell Junction, NY (US);

Kaushik Chanda, Hopewell Junction, NY (US);

Ronald G. Filippi, Hopewell Junction, NY (US);

Stephan Grunow, Hopewell Junction, NY (US);

David L. Rath, Yorktown Heights, NY (US);

Sujatha Sankaran, Hopewell Junction, NY (US);

Andrew H. Simon, Hopewell Junction, NY (US);

Theodorus Eduardus Standaert, Hopewell Junction, NY (US);

Chih-chao Yang, Albany, NY (US);

Inventors:

Griselda Bonilla, Hopewell Junction, NY (US);

Kaushik Chanda, Hopewell Junction, NY (US);

Ronald G. Filippi, Hopewell Junction, NY (US);

Stephan Grunow, Hopewell Junction, NY (US);

David L. Rath, Yorktown Heights, NY (US);

Sujatha Sankaran, Hopewell Junction, NY (US);

Andrew H. Simon, Hopewell Junction, NY (US);

Theodorus Eduardus Standaert, Hopewell Junction, NY (US);

Chih-Chao Yang, Albany, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for capping lines includes forming a metal film layer on a copper line by a selective deposition process, the copper line disposed in a dielectric substrate, wherein the depositing also results in the deposition of stray metal material on the surface of the dielectric substrate, and etching with an isotropic etching process to remove a portion of the metal film layer and the stray metal material on the surface of the dielectric substrate, wherein the metal film layer is deposited at an initial thickness sufficient to leave a metal film layer cap remaining on the copper line following the removal of the stray metal material.


Find Patent Forward Citations

Loading…