The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2012
Filed:
Oct. 03, 2007
Applicants:
Maciej Wiatr, Dresden, DE;
Frank Wirbeleit, Freiberg, DE;
Andy Wei, Dresden, DE;
Andreas Gehring, Dresden, DE;
Inventors:
Maciej Wiatr, Dresden, DE;
Frank Wirbeleit, Freiberg, DE;
Andy Wei, Dresden, DE;
Andreas Gehring, Dresden, DE;
Assignee:
Advanced Micro Devices, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 21/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
By removing an outer spacer of a transistor element, used for the formation of highly complex lateral dopant profiles, prior to the formation of metal silicide, employing a wet chemical etch process, it is possible to position a stressed contact liner layer more closely to the channel region, thereby allowing a highly efficient stress transfer mechanism for creating a corresponding strain in the channel region, without affecting circuit elements in the P-type regions.