The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2012
Filed:
May. 21, 2010
Markus Lenski, Dresden, DE;
Klaus Hempel, Dresden, DE;
Vivien Schroeder, Ottendorf-Okrilla, DE;
Robert Binder, Dresden, DE;
Joachim Metzger, Butzbach, DE;
Markus Lenski, Dresden, DE;
Klaus Hempel, Dresden, DE;
Vivien Schroeder, Ottendorf-Okrilla, DE;
Robert Binder, Dresden, DE;
Joachim Metzger, Butzbach, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
In a replacement gate approach in sophisticated semiconductor devices, a tantalum nitride etch stop material may be efficiently removed on the basis of a wet chemical etch recipe using ammonium hydroxide. Consequently, a further work function adjusting material may be formed with superior uniformity, while the efficiency of the subsequent adjusting of the work function may also be increased. Thus, superior uniformity, i.e., less pronounced transistor variability, may be accomplished on the basis of a replacement gate approach in which the work function of the gate electrodes of P-channel transistors and N-channel transistors is adjusted after completing the basic transistor configuration.