The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2012
Filed:
Sep. 03, 2008
Hiroshi Sato, Nirasaki, JP;
Hiroshi Sato, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
Method for manufacturing a semiconductor device, which may include (a) forming a coating film on a substrate by applying a coating liquid including a polymer conductive material dissolved in an insulating solvent on the substrate after the step (a); (b) heat-treating the coating film; and (c) forming, before or after the steps (a) and (b), a gate electrode on the substrate. Herein, a surface layer portion is an insulating layer, and an inner layer portion is an organic semiconductor layer, and the surface layer portion and the inner layer portion are formed separate from each other to allow the surface layer portion and the inner layer portion to be used as a gate insulating film and a channel of a field-effect transistor, respectively.