The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2012
Filed:
Jul. 17, 2009
Hun Sang Kim, San Ramon, CA (US);
Hyungje Woo, Cupertino, CA (US);
Shinichi Koseki, Palo Alto, CA (US);
Eda Tuncel, Menlo Park, CA (US);
Chung Liu, San Jose, CA (US);
Hun Sang Kim, San Ramon, CA (US);
Hyungje Woo, Cupertino, CA (US);
Shinichi Koseki, Palo Alto, CA (US);
Eda Tuncel, Menlo Park, CA (US);
Chung Liu, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A selective self-aligned dual patterning method. The method includes performing a single lithography operation to form a patterned mask having a narrow feature in a region of a substrate that is to a have pitch-reduced feature and a wide feature in a region of the substrate that is to have a non-pitch-reduced feature. Using the patterned mask, a template mask is formed with a first etch and the patterned mask is then removed from the narrow feature while being retained over the wide feature. The template mask is then thinned with a second etch to introduce a thickness delta in the template mask between the narrow and wide features. A spacer mask is then formed and the thinned narrow template mask is removed to leave a pitch double spacer mask while the thick wide template mask feature is retained to leave a non-pitch reduced mask.