The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2012
Filed:
Feb. 16, 2009
Feng-yih Chang, Chiayi County, TW;
Pei-yu Chou, Tainan County, TW;
Jiunn-hsiung Liao, Tainan County, TW;
Chih-wen Feng, Tainan County, TW;
Ying-chih Lin, Tainan City, TW;
Feng-Yih Chang, Chiayi County, TW;
Pei-Yu Chou, Tainan County, TW;
Jiunn-Hsiung Liao, Tainan County, TW;
Chih-Wen Feng, Tainan County, TW;
Ying-Chih Lin, Tainan City, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method for controlling an ADI-AEI CD difference ratio of openings having different sizes is described. The openings are formed through a silicon-containing material layer, an etching resistive layer and a target material layer in turn. Before the opening etching steps, at least one of the opening patterns in the photoresist mask is altered in size through photoresist trimming or deposition of a substantially conformal polymer layer. A first etching step forming thicker polymer on the sidewall of the wider opening pattern is performed to form a patterned Si-containing material layer. A second etching step is performed to remove exposed portions of the etching resistive layer and the target material layer. At least one parameter among the parameters of the photoresist trimming or polymer layer deposition step and the etching parameters of the first etching step is controlled to obtain a predetermined ADI-AEI CD difference ratio.