Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants

Abstract

A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6. The film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens) wherein the precursor is a compound of the formula R(OR)(O(O)CR)Si—R—SiR(O(O)CR)(OR)where Rand Rare independently H or C1 to C4 linear or branched, saturated, singly or multiply unsaturated, cyclic, partially or fully fluorinated hydrocarbon; R, Rand Rare independently C1 to C6 linear or branched, saturated, singly or multiply unsaturated, cyclic, aromatic, partially or fully fluorinated hydrocarbon, Rand Rare independently H, C1 to C6 linear or branched, saturated, singly or multiply unsaturated, cyclic, aromatic, partially or fully fluorinated hydrocarbon, n is 0 to 3, m is 0 to 3, q is 0 to 3 and p is 0 to 3, provided that n+m>1, n+p 3, and m+q 3, wherein the porogen is selected from the group consisting of norbornadiene, alpha-terpinene, limonene, cyclooctane, and cymene. The porogens are subsequently removed to provide the porous film.