The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2012
Filed:
Apr. 01, 2010
Shifang LI, Pleasanton, CA (US);
Manuel Madriaga, San Jose, CA (US);
Shifang Li, Pleasanton, CA (US);
Manuel Madriaga, San Jose, CA (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
Provided is a method for determining profile parameters of a sample structure on a workpiece using an optical metrology system optimized to achieve one or more accuracy targets, the optical metrology system including an optical metrology tool, an optical metrology tool model, a profile model of the sample structure, and a parameter extraction algorithm, the method comprising: setting one or more accuracy targets for profile parameter determination for the sample structure; selecting a number of rays and beam propagation parameters to be used to model the optical metrology tool, measuring a diffraction signal off the sample structure using the optical metrology tool, generating a metrology output signal, determining an adjusted metrology output signal using the metrology output signal and calibration data, concurrently optimizing the optical metrology tool model and the profile model using the adjusted metrology output signal and the parameter extraction algorithm.