The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2012
Filed:
Jul. 23, 2010
Fen Chen, Williston, VT (US);
Richard Steven Kontra, Williston, VT (US);
Tom C. Lee, Essex Junction, VT (US);
Theodore M. Levin, Winooski, VT (US);
Christopher David Muzzy, Burlington, VT (US);
Timothy Dooling Sullivan, Underhill, VT (US);
Fen Chen, Williston, VT (US);
Richard Steven Kontra, Williston, VT (US);
Tom C. Lee, Essex Junction, VT (US);
Theodore M. Levin, Winooski, VT (US);
Christopher David Muzzy, Burlington, VT (US);
Timothy Dooling Sullivan, Underhill, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A structure. The structure includes a substrate, a resistive/reflective region on the substrate, and a light source/light detecting and/or a sens-amp circuit configured to ascertain a reflectance and/or resistance change in the resistive/reflective region. The resistive/reflective region includes a material having a characteristic of the material's reflectance and/or resistance being changed due to a phase change in the material. The resistive/reflective region is configured to respond, to an electric current through the resistive/reflective region and/or a laser beam projected on the resistive/reflective region, by the phase change in the material which causes a reflectance and/resistance change in the resistive/reflective region from a first reflectance and/or resistance value to a second reflectance and/or resistance value different from the first reflectance and/or resistance value.