The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8283254 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 09, 2012

Filed:

Dec. 23, 2010
Applicant:

Takahito Mukawa, Yamanashi, JP;

Inventor:

Takahito Mukawa, Yamanashi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract

There are provided an etching method and an etching apparatus suitable for etching an antireflection coating layer by using a resist film as a mask. The etching method includes forming the antireflection coating layer (Si-ARC layer) on an etching target layer; forming a patterned resist film (ArF resist film) on the antireflection coating layer; and forming a desired pattern on the antireflection coating layer by introducing an etching gas including a CFgas, a COS gas and an Ogas into a processing chamber and etching the antireflection coating layer by the etching gas while using the resist film as a mask.


Find Patent Forward Citations

Mukawa, Takahito. (2012). Etching method and etching apparatus (U.S. Patent No. 8283254). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8283254

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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