The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2012
Filed:
Feb. 14, 2011
Yoshinori Ikebuchi, Chuo-ku, JP;
Yoshihiro Takaishi, Chuo-ku, JP;
Yoshinori Ikebuchi, Chuo-ku, JP;
Yoshihiro Takaishi, Chuo-ku, JP;
Elpida Memory, Inc., Tokyo, JP;
Abstract
The present invention provides a semiconductor device having a plurality of vertical transistors, which includes, on a substrate, a semiconductor pillar; gate electrodeprovided on the side of the pillar via gate insulating film; first diffusion layerconnected to the bottom of the pillar; and second diffusion layerconnected to the top of the pillar, second diffusion layerincludes first portionformed within the area over the pillar, and second portionwhich is an epitaxial growth layer, formed on the first portion and contacting with insulating filmwhich is provided between adjacent vertical transistors.