The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2012
Filed:
Feb. 01, 2011
Takayuki Tsukamoto, Mie-ken, JP;
Yoichi Minemura, Mie-ken, JP;
Natsuki Kikuchi, Mie-ken, JP;
Mitsuru Sato, Mie-ken, JP;
Hiroshi Kanno, Mie-ken, JP;
Takafumi Shimotori, Kanagawa-ken, JP;
Takayuki Tsukamoto, Mie-ken, JP;
Yoichi Minemura, Mie-ken, JP;
Natsuki Kikuchi, Mie-ken, JP;
Mitsuru Sato, Mie-ken, JP;
Hiroshi Kanno, Mie-ken, JP;
Takafumi Shimotori, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a nonvolatile memory device includes a memory unit and a control unit. The memory unit includes first and second interconnects, and a memory cell. The second interconnect is non-parallel to the first interconnect. The memory cell includes a resistance change layer provided at an intersection between the first and second interconnects. The control unit is connected to the first and second interconnects to supply voltage and current to the resistance change layer. The control unit increases an upper limit of a current supplied to the first interconnect based on a change of a potential of the first interconnect when applying a set operation voltage to the first interconnect in a set operation of changing the resistance change layer from a first state with a first resistance value to a second state with a second resistance value being less than the first resistance value.