The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2012
Filed:
Aug. 05, 2008
Applicants:
Hideo Ohno, Sendai, JP;
Shoji Ikeda, Sendai, JP;
Young Min Lee, Sendai, JP;
Jun Hayakawa, Hino, JP;
Inventors:
Assignees:
Tohoku University, Miyagi, JP;
Hitachi, Ltd., Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided is a high-speed and ultra-low-power-consumption nonvolatile memory having a high temperature stability at a zero magnetic field. In a tunnel magnetoresistive film constituting a nonvolatile magnetic memory that employs a writing method using a spin-transfer torque, an insulating layer and a nonmagnetic conductive layer are stacked above a ferromagnetic free layer.
Ohno, Hideo. (2012). Magnetoresistive element, magnetic memory cell and magnetic random access memory using the same (U.S. Patent No. 8274818). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8274818
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile