The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2012
Filed:
Jul. 31, 2008
Youn-joung Cho, Suwon-si, KR;
Jung-ho Lee, Suwon-si, KR;
Jun-hyun Cho, Suwon-si, KR;
Seung-min Ryu, Busan, KR;
Kyoo-chul Cho, Yongin-si, KR;
Jung-sik Choi, Seongnam-si, KR;
Youn-Joung Cho, Suwon-si, KR;
Jung-Ho Lee, Suwon-si, KR;
Jun-Hyun Cho, Suwon-si, KR;
Seung-Min Ryu, Busan, KR;
Kyoo-Chul Cho, Yongin-si, KR;
Jung-Sik Choi, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Disclosed are an organometallic precursor that may be used in manufacturing a semiconductor device, a thin film having the same, a metal wiring including the thin film, a method of forming a thin film and a method of manufacturing a metal wiring. An organometallic precursor including a central metal, a borohydride ligand and an amine ligand for reducing a polarity of the organometallic precursor may be provided onto a substrate, and may be thermally decomposed to form a thin film on the substrate. The organometallic precursor having a reduced polarity may be provided to a chamber with a constant flow rate, and thus stability and/or efficiency of a semiconductor manufacturing process may be improved.