The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2012
Filed:
Jan. 08, 2009
Stefan Sedlmaier, Munich, DE;
Hans-joachim Schulze, Ottobrunn, DE;
Anton Mauder, Kolbermoor, DE;
Helmut Strack, Munich, DE;
Armin Willmeroth, Augsburg, DE;
Frank Pfirsch, Munich, DE;
Stefan Sedlmaier, Munich, DE;
Hans-Joachim Schulze, Ottobrunn, DE;
Anton Mauder, Kolbermoor, DE;
Helmut Strack, Munich, DE;
Armin Willmeroth, Augsburg, DE;
Frank Pfirsch, Munich, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor component with charge compensation structure has a semiconductor body having a drift path between two electrodes. The drift path has drift zones of a first conduction type, which provide a current path between the electrodes in the drift path, while charge compensation zones of a complementary conduction type constrict the current path of the drift path. For this purpose, the drift path has two alternately arranged, epitaxially grown diffusion zone types, the first drift zone type having monocrystalline semiconductor material on a monocrystalline substrate, and a second drift zone type having monocrystalline semiconductor material in a trench structure, with complementarily doped walls, the complementarily doped walls forming the charge compensation zones.