The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2012
Filed:
Jul. 12, 2010
Applicants:
Kramadhati V. Ravi, Atherton, CA (US);
Brian S. Doyle, Portland, OR (US);
Inventors:
Kramadhati V. Ravi, Atherton, CA (US);
Brian S. Doyle, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01);
U.S. Cl.
CPC ...
Abstract
A stressed semiconductor using carbon is provided. At least one carbon layer containing diamond is formed either below a semiconductor layer or above a semiconductor device. The carbon layer induces stress in the semiconductor layer, thereby increasing carrier mobility in the device channel region. The carbon layer may be selectively formed or patterned to localize the induced stress.