The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2012
Filed:
Mar. 01, 2011
Fethi Dhaoui, Patterson, CA (US);
John Mccollum, Saratoga, CA (US);
Vidyadhara Bellippady, Cupertino, CA (US);
Zhigang Wang, Sunnyvale, CA (US);
Fethi Dhaoui, Patterson, CA (US);
John McCollum, Saratoga, CA (US);
Vidyadhara Bellippady, Cupertino, CA (US);
Zhigang Wang, Sunnyvale, CA (US);
Actel Corporation, Mountain View, CA (US);
Abstract
A two-transistor non-volatile memory cell is formed in a semiconductor body. A memory-transistor well is disposed within the semiconductor body. A switch-transistor well is disposed within the semiconductor body and is electrically isolated from the memory transistor well. A memory transistor including spaced-apart source and drain regions is formed within the memory-transistor well. A switch transistor including spaced-apart source and drain regions is formed within the switch-transistor well region. A floating gate is insulated from and self aligned with the source and drain regions of the memory transistor and switch transistor. A control gate is disposed above and aligned to the floating gate and with the source and drain regions of the memory transistor and the switch transistor.