The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2012
Filed:
May. 20, 2011
Soo Jin Chua, Singapore, SG;
Hailong Zhou, Singapore, SG;
Jianyi Lin, Singapore, SG;
Hui Pan, Singapore, SG;
Soo Jin Chua, Singapore, SG;
Hailong Zhou, Singapore, SG;
Jianyi Lin, Singapore, SG;
Hui Pan, Singapore, SG;
National University of Singapore, Singapore, SG;
Abstract
A growth method is proposed for high quality zinc oxide comprising the following steps: (1) growing a gallium nitride layer on a sapphire substrate around a temperature of 1000° C.; (2) patterning a SiOmask into stripes oriented in the gallium nitride <100> or <110> direction; (3) growing epitaxial lateral overgrowth of (ELO) gallium nitride layers by controlling the facet planes via choosing the growth temperature and the reactor; (4) depositing zinc oxide films on facets ELO gallium nitride templates by chemical vapor deposition (CVD). Zinc oxide crystal of high quality with a reduced number of crystal defects can be grown on a gallium nitride template. This method can be used to fabricate zinc oxide films with low dislocation density lower than 10/cm, which will find important applications in future electronic and optoelectronic devices.