The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2012
Filed:
Aug. 06, 2008
Applicant:
Osamu Takaoka, Chiba, JP;
Inventor:
Osamu Takaoka, Chiba, JP;
Assignee:
SII NanoTechnology Inc., , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/72 (2012.01); G03F 1/74 (2012.01);
U.S. Cl.
CPC ...
Abstract
A photomask defect correction method for correcting a defect of a photomask. A defect in a portion of a photomask to be corrected is observed and information of the observed defect for performing correction of the defect is acquired. The observed defect is corrected in accordance with the acquired defect information by irradiating the observed defect with a focused ion beam from an ion beam irradiation system having a gas field ion source that generates rare gas ions for forming the focused ion beam.