The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2012
Filed:
Oct. 07, 2008
Xinliang LU, Fremont, CA (US);
Haichun Yang, Santa Clara, CA (US);
Zhenbin GE, San Mateo, CA (US);
Nan LU, San Jose, CA (US);
David T. OR, Santa Clara, CA (US);
Chien-teh Kao, Sunnyvale, CA (US);
Mei Chang, Saratoga, CA (US);
Xinliang Lu, Fremont, CA (US);
Haichun Yang, Santa Clara, CA (US);
Zhenbin Ge, San Mateo, CA (US);
Nan Lu, San Jose, CA (US);
David T. Or, Santa Clara, CA (US);
Chien-Teh Kao, Sunnyvale, CA (US);
Mei Chang, Saratoga, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods for etching dielectric layers comprising silicon and nitrogen are provided herein. In some embodiments, such methods may include providing a substrate having a dielectric layer comprising silicon and nitrogen disposed thereon, forming reactive species from a process gas comprising hydrogen (H) and nitrogen trifluoride (NF) using a remote plasma; and etching the dielectric layer using the reactive species. In some embodiments, an oxide layer is disposed adjacent to the dielectric layer. In some embodiments, the flow rate ratio of the process gas can be adjusted such that an etch selectivity of the dielectric layer to at least one of the oxide layer or the substrate is between about 0.8 to about 4.