The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2012
Filed:
Jul. 13, 2009
Insik Jin, Eagan, MN (US);
Youngpil Kim, Eden Prairie, MN (US);
Ming Sun, Eden Prairie, MN (US);
Chulmin Jung, Eden Prairie, MN (US);
Venugopalan Vaithyanathan, Bloomington, MN (US);
Nurul Amin, Woodbury, MN (US);
Wei Tian, Bloomington, MN (US);
Yong LU, Edina, MN (US);
Insik Jin, Eagan, MN (US);
YoungPil Kim, Eden Prairie, MN (US);
Ming Sun, Eden Prairie, MN (US);
Chulmin Jung, Eden Prairie, MN (US);
Venugopalan Vaithyanathan, Bloomington, MN (US);
Nurul Amin, Woodbury, MN (US);
Wei Tian, Bloomington, MN (US);
Yong Lu, Edina, MN (US);
Seagate Technology LLC, Scotts Valley, CA (US);
Abstract
A non-volatile memory cell and method of use thereof. In some embodiments, an individually programmable resistive sense memory (RSM) element is connected in series with a programmable metallization cell (PMC) switching element. In operation, while the switching element is programmed to a first resistive state, no current passes through the RSM element and while a second resistive state is programmed to the RSM element, current passes through the RSM element.