The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2012
Filed:
Oct. 15, 2010
Applicants:
Stephan Kronholz, Dresden, DE;
Carsten Reichel, Dresden, DE;
Annekathrin Zeun, Dresden, DE;
Martin Trentzsch, Dresden, DE;
Inventors:
Stephan Kronholz, Dresden, DE;
Carsten Reichel, Dresden, DE;
Annekathrin Zeun, Dresden, DE;
Martin Trentzsch, Dresden, DE;
Assignee:
GlobalFoundries, Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/8234 (2006.01); H01L 21/331 (2006.01); H01L 21/4763 (2006.01); H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
Abstract
In sophisticated transistor elements, long-term threshold voltage shifts in transistors comprising a threshold adjusting semiconductor alloy may be reduced by reducing the roughness of an interface formed between the threshold adjusting semiconductor material and the gate dielectric material. To this end, a portion of the threshold adjusting semiconductor material may be oxidized and may be removed prior to forming the high-k dielectric material.