The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8242527 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 14, 2012

Filed:

Mar. 22, 2010
Applicants:

Si-chen Lee, Taipei, TW;

Yu-wei Jiang, Taipei, TW;

Yi-ting Wu, Taipei, TW;

Ming-wei Tsai, Taipei, TW;

Pei-en Chang, Taipei, TW;

Inventors:

Si-Chen Lee, Taipei, TW;

Yu-Wei Jiang, Taipei, TW;

Yi-Ting Wu, Taipei, TW;

Ming-Wei Tsai, Taipei, TW;

Pei-En Chang, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
Abstract

A light emitting device for generating infrared light includes a substrate, a first metal layer, a dielectric layer and a second metal layer. The substrate has a first surface. The first metal layer is formed on the first surface of the substrate. The dielectric layer is formed on the first metal layer. A thickness of the dielectric layer is greater than a particular value. The second metal layer is formed on the dielectric layer. When the light emitting device is heated, the dielectric layer has a waveguide mode such that the infrared light generated by the light emitting device can be transmitted in the dielectric layer. A wavelength of the infrared light generated in the waveguide mode relates to the thickness of the dielectric layer.


Find Patent Forward Citations

Lee, Si-Chen. (2012). Light emitting device and method of manufacturing the same (U.S. Patent No. 8242527). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8242527

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