The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2012
Filed:
Dec. 21, 2007
Sumie Nagaseki, Yamanashi, JP;
Sumie Nagaseki, Yamanashi, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
Provided is a method for performing etching process or film forming process to a substrate W whereupon a prescribed pattern is formed with an opening. The method is provided with a step of mixing a liquid and a gas, at least one of which contains a component that contributes to the etching process or the film forming process, and generating charged nano-bubbleshaving a diameter smaller than that of the opening formed on the semiconductor substrate W; a step of forming an electric field to attract the nano-bubbles onto the surface of the substrate W; and a step of performing the process by supplying the substrate with the liquid containing the nano-bubbleswhile forming the electric field.