The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8241996 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 14, 2012

Filed:

Feb. 24, 2006
Applicants:

Francois J. Henley, Aptos, CA (US);

Harry Robert Kirk, Campbell, CA (US);

James Andrew Sullivan, Woodside, CA (US);

Inventors:

Francois J. Henley, Aptos, CA (US);

Harry Robert Kirk, Campbell, CA (US);

James Andrew Sullivan, Woodside, CA (US);

Assignee:

Silicon Genesis Corporation, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/46 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method and structures for manufacturing multi-layered substrates. The method includes providing a donor substrate, which has a first deflection characteristic. The donor substrate has a backside, a face, a cleave region, and a thickness of material defined between the cleave region and the face. The method includes bonding the face of the donor substrate to a face of the handle substrate. The method includes coupling a backing substrate to the backside of the donor substrate to form a multilayered structure. The backing substrate is adequate to cause the first deflection characteristic of the donor substrate to be reduced to a predetermined level. The predetermined level is a suitable deflection characteristic for the thickness of material to be transferred onto the face of a handle substrate. The method includes initiating a controlled cleaving process within a portion of the cleave region of the donor substrate to begin removal of the thickness of material from the donor substrate at a portion of the cleave region, while the backing substrate remains attached to the donor substrate to maintain at least the suitable deflection characteristic.


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