The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 14, 2012

Filed:

Mar. 28, 2008
Applicants:

Mitsuo Kato, Kanagawa, JP;

Masaki Sugiyama, Kanagawa, JP;

Akihiko Hiroe, Miyagi, JP;

Tadahiro Ohmi, Miyagi, JP;

Masaki Hirayama, Miyagi, JP;

Inventors:

Mitsuo Kato, Kanagawa, JP;

Masaki Sugiyama, Kanagawa, JP;

Akihiko Hiroe, Miyagi, JP;

Tadahiro Ohmi, Miyagi, JP;

Masaki Hirayama, Miyagi, JP;

Assignees:

Tokyo Electron Limited, Tokyo, JP;

Tohoku University, Sendai-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); C23C 16/00 (2006.01); C23C 14/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A microwave plasma processing systemincludes: a processing chamberin which a desired process is applied to a target object using a plasma; a susceptor(stage) in the processing chamberto support the target object; a high-frequency power supplysupplying high-frequency electric power to the susceptor; a capacitorprovided to the susceptor; and a measurement devicemeasuring voltages at the pair of plates of the capacitorwhen high-frequency electric power is supplied from the high-frequency power supplyto the susceptor


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