The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 07, 2012

Filed:

Jul. 13, 2010
Applicants:

Kuei Shun Chen, Hsin-Chu, TW;

Meng-wei Chen, Taichung, TW;

George Liu, Shin-Chu, TW;

Jiann Yuan Huang, Hsinchu, TW;

Chia-ching Lin, Taichung, TW;

Inventors:

Kuei Shun Chen, Hsin-Chu, TW;

Meng-Wei Chen, Taichung, TW;

George Liu, Shin-Chu, TW;

Jiann Yuan Huang, Hsinchu, TW;

Chia-Ching Lin, Taichung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01);
U.S. Cl.
CPC ...
Abstract

The alignment mark and method for making the same are described. In one embodiment, a semiconductor structure includes a substrate having a device region and an alignment region; a first shallow trench isolation (STI) feature in the alignment region and having a first depth D; a second STI feature in the device region and having a second depth D; an alignment mark with patterned features overlying the first STI in the alignment region; and a gate stack formed on an active region in the device region.


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