The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2012
Filed:
Feb. 09, 2011
Mukta G Farooq, Hopewell Junction, NY (US);
John a Griesemer, Salt Point, NY (US);
Gary Lafontant, Elmont, NY (US);
William Francis Landers, Wappingers Falls, NY (US);
Timothy Dooling Sullivan, Underhill, VT (US);
Mukta G Farooq, Hopewell Junction, NY (US);
John A Griesemer, Salt Point, NY (US);
Gary LaFontant, Elmont, NY (US);
William Francis Landers, Wappingers Falls, NY (US);
Timothy Dooling Sullivan, Underhill, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The embodiments provide a method for reducing electromigration in a circuit containing a through-silicon via (TSV) and the resulting novel structure for the TSV. A TSV is formed through a semiconductor substrate. A first end of the TSV connects to a first metallization layer on a device side of the semiconductor substrate. A second end of the TSV connects to a second metallization layer on a grind side of the semiconductor substrate. A first flat edge is created on the first end of the TSV at the intersection of the first end of the TSV and the first metallization layer. A second flat edge is created on the second end of the TSV at the intersection of the second end of the TSV and the second metallization layer. On top of the first end a metal contact grid is placed, having less than eighty percent metal coverage.