The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2012
Filed:
Feb. 24, 2010
Applicants:
Franz Kreupl, Mountain View, CA (US);
Jingyan Zhang, Santa Clara, CA (US);
Huiwen Xu, Sunnyvale, CA (US);
Inventors:
Franz Kreupl, Mountain View, CA (US);
Jingyan Zhang, Santa Clara, CA (US);
Huiwen Xu, Sunnyvale, CA (US);
Assignee:
SanDisk 3D LLC, Milpitas, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01); H01L 27/108 (2006.01); H01L 29/94 (2006.01); H01L 21/02 (2006.01); H01L 21/20 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a first aspect, a method of forming a memory cell is provided that includes (1) forming a metal-insulator-metal (MIM) stack, the MIM stack including (a) a first conductive carbon layer; (b) a low-hydrogen, silicon-containing carbon layer above the first conductive carbon layer; and (c) a second conductive carbon layer above the low-hydrogen, silicon-containing carbon layer; and (2) forming a steering element coupled to the MIM stack. Numerous other aspects are provided.