The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2012
Filed:
Mar. 05, 2008
Feng-yi Chang, Chiayi County, TW;
Pei-yu Chou, Tainan County, TW;
Jiunn-hsiung Liao, Tainan Hsien, TW;
Chih-wen Feng, Tainan County, TW;
Ying-chih Lin, Tainan, TW;
Po-chao Tsao, Taipei Hsien, TW;
Feng-Yi Chang, Chiayi County, TW;
Pei-Yu Chou, Tainan County, TW;
Jiunn-Hsiung Liao, Tainan Hsien, TW;
Chih-Wen Feng, Tainan County, TW;
Ying-Chih Lin, Tainan, TW;
Po-Chao Tsao, Taipei Hsien, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A semiconductor substrate having an etch stop layer and at least a dielectric layer disposed from bottom to top is provided. The dielectric layer and the etching stop layer is then patterned to form a plurality of openings exposing the semiconductor substrate. A dielectric thin film is subsequently formed to cover the dielectric layer, the sidewalls of the openings, and the semiconductor substrate. The dielectric thin film disposed on the dielectric layer and the semiconductor substrate is then removed while the dielectric thin film disposed on the sidewalls remains.