The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2012
Filed:
Aug. 17, 2009
Applicants:
Christopher Cole, Averill Park, NY (US);
Akiteru Ko, Schenectady, NY (US);
Inventors:
Christopher Cole, Averill Park, NY (US);
Akiteru Ko, Schenectady, NY (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of pattern etching a Si-containing anti-reflective coating (ARC) layer is described. The method comprises etching a feature pattern into the silicon-containing ARC layer using plasma formed from a process gas containing SFand a hydrocarbon gas. The method further comprises adjusting a flow rate of the hydrocarbon gas relative to a flow rate of the SFto reduce a CD bias between a final CD for nested structures in the feature pattern and a final CD for isolated structures in the feature pattern.