The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2012
Filed:
Jun. 27, 2008
Kelvin Chan, San Jose, CA (US);
Khaled A. Elsheref, San Jose, CA (US);
Alexandros T. Demos, Fremont, CA (US);
Meiyee Shek, Palo Alto, CA (US);
Lipan LI, San Jose, CA (US);
Li-qun Xia, Cupertino, CA (US);
Kang Sub Yim, Santa Clara, CA (US);
Kelvin Chan, San Jose, CA (US);
Khaled A. Elsheref, San Jose, CA (US);
Alexandros T. Demos, Fremont, CA (US);
Meiyee Shek, Palo Alto, CA (US);
Lipan Li, San Jose, CA (US);
Li-Qun Xia, Cupertino, CA (US);
Kang sub Yim, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method and apparatus for treating a substrate is provided. A porous dielectric layer is formed on the substrate. In some embodiments, the dielectric may be capped by a dense dielectric layer. The dielectric layers are patterned, and a dense dielectric layer deposited conformally over the substrate. The dense conformal dielectric layer seals the pores of the porous dielectric layer against contact with species that may infiltrate the pores. The portion of the dense conformal pore-sealing dielectric layer covering the field region and bottom portions of the pattern openings is removed by directional selective etch.