The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2012
Filed:
Apr. 28, 2009
Applicants:
Hung-lin Shih, Hsinchu, TW;
Wen-ching Tsai, Hsinchu, TW;
Yu-hua Huang, Hsinchu, TW;
Inventors:
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract
An illuminating efficiency-increasable and light-erasable memory including a substrate, a memory device, many dielectric layers, and many cap layers is provided. The substrate includes a memory region. The memory device includes a select gate and a floating gate, and the select gate and the floating gate are disposed adjacently on the substrate in the memory region. The dielectric layers are disposed on the substrate and cover the memory device. The dielectric layers have an opening located above the floating gate. Each of the cap layers is disposed on each of the dielectric layers, respectively.