The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2012
Filed:
Nov. 01, 2010
Joseph Ervin, Wappingers Falls, NY (US);
Brian Messenger, Newburgh, NY (US);
Karen A. Nummy, Newburgh, NY (US);
Ravi M. Todi, Poughkeepsie, NY (US);
Joseph Ervin, Wappingers Falls, NY (US);
Brian Messenger, Newburgh, NY (US);
Karen A. Nummy, Newburgh, NY (US);
Ravi M. Todi, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Deep trench capacitor structures and methods of manufacture are disclosed. The method includes forming a deep trench structure in a wafer comprising a substrate, buried oxide layer (BOX) and silicon (SOI) film. The method further includes forming a plate on a sidewall of the deep trench structure in the substrate by an implant process. The implant processes contaminate exposed edges of the SOI film in the deep trench structure. The method further includes removing the contaminated exposed edges of the SOI film by an etching process to form a void in the SOI film. The method further includes growing epitaxial Si in the void, prior to completing a capacitor structure.