The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2012
Filed:
Mar. 04, 2010
Zhengwen LI, Hopewell Junction, NY (US);
Michael P. Chudzik, Hopewell Junction, NY (US);
Unoh Kwon, Hopewell Junction, NY (US);
Filippos Papadatos, Hopewell Junction, NY (US);
Andrew H. Simon, Hopewell Junction, NY (US);
Keith Kwong Hon Wong, Hopewell Junction, NY (US);
Zhengwen Li, Hopewell Junction, NY (US);
Michael P. Chudzik, Hopewell Junction, NY (US);
Unoh Kwon, Hopewell Junction, NY (US);
Filippos Papadatos, Hopewell Junction, NY (US);
Andrew H. Simon, Hopewell Junction, NY (US);
Keith Kwong Hon Wong, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An electrical device is provided with a p-type semiconductor device having a first gate structure that includes a gate dielectric on top of a semiconductor substrate, a p-type work function metal layer, a metal layer composed of titanium and aluminum, and a metal fill composed of aluminum. An n-type semiconductor device is also present on the semiconductor substrate that includes a second gate structure that includes a gate dielectric, a metal layer composed of titanium and aluminum, and a metal fill composed of aluminum. An interlevel dielectric is present over the semiconductor substrate. The interlevel dielectric includes interconnects to the source and drain regions of the p-type and n-type semiconductor devices. The interconnects are composed of a metal layer composed of titanium and aluminum, and a metal fill composed of aluminum. The present disclosure also provides a method of forming the aforementioned structure.