The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2012
Filed:
Sep. 19, 2008
Toshihide Endoh, Suzuka, JP;
Toshiyuki Ishii, Yokkaichi, JP;
Masaaki Sakaguchi, Suzuka, JP;
Naoki Hatakeyama, Yokkaichi, JP;
Toshihide Endoh, Suzuka, JP;
Toshiyuki Ishii, Yokkaichi, JP;
Masaaki Sakaguchi, Suzuka, JP;
Naoki Hatakeyama, Yokkaichi, JP;
Mitsubishi Materials Corporation, Tokyo, JP;
Abstract
The reactor for polycrystalline silicon is a reactor for polycrystalline silicon in which a silicon seed rod installed inside the reactor is heated by supplying electricity, a raw material gas supplied inside the reactor is allowed to react, thereby producing polycrystalline silicon on the surface of the silicon seed rod, and specifically, the reactor for polycrystalline silicon is provided with a raw material gas supply port installed on the bottom of the reactor and a raw material gas supply nozzle attached to the raw material gas supply port so as to be communicatively connected and extending upward, in which the upper end of the raw material gas supply nozzle is set to a height in a range from −10 cm to +5 cm on the basis of the upper end of the electrode which retains the silicon seed rod.