The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2012
Filed:
Jun. 09, 2009
Bong-cheol Kim, Seoul, KR;
Dae-youp Lee, Gyeonggi-do, KR;
Sang-youn JO, Gyeonggi-do, KR;
Ja-min Koo, Gyeonggi-do, KR;
Byeong-hwan Son, Gyeonggi-do, KR;
Jang-hwan Jeong, Gyeonggi-do, KR;
Bong-cheol Kim, Seoul, KR;
Dae-youp Lee, Gyeonggi-do, KR;
Sang-youn Jo, Gyeonggi-do, KR;
Ja-min Koo, Gyeonggi-do, KR;
Byeong-hwan Son, Gyeonggi-do, KR;
Jang-hwan Jeong, Gyeonggi-do, KR;
Abstract
Provided is a method of forming patterns of a semiconductor device, whereby patterns having various widths can be simultaneously formed, and pattern density can be doubled by a double patterning process in a portion of the semiconductor device. In the method of forming patterns of a semiconductor device, a first mold mask pattern and a second mold mask patter having different widths are formed on a substrate. A pair of first spacers covering both sidewalls of the first mold mask pattern and a pair of second spacers covering both sidewalls of the second mold mask pattern are formed. The first mold mask pattern and the second mold mask pattern are removed, and a wide-width mask pattern covering the second spacer is formed. A lower layer is etched using the first spacers, the second spacers, and the wide-width mask pattern as an etch mask.