The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2012
Filed:
Sep. 10, 2009
Jyunichi Ozeki, Yokohama, JP;
Naoharu Shimomura, Tokyo, JP;
Sumio Ikegawa, Yokohama, JP;
Tadashi Kai, Tokyo, JP;
Masahiko Nakayama, Yokohama, JP;
Hisanori Aikawa, Yokohama, JP;
Tatsuya Kishi, Yokohama, JP;
Hiroaki Yoda, Sagamihara, JP;
Eiji Kitagawa, Yokohama, JP;
Masatoshi Yoshikawa, Yokohama, JP;
Jyunichi Ozeki, Yokohama, JP;
Naoharu Shimomura, Tokyo, JP;
Sumio Ikegawa, Yokohama, JP;
Tadashi Kai, Tokyo, JP;
Masahiko Nakayama, Yokohama, JP;
Hisanori Aikawa, Yokohama, JP;
Tatsuya Kishi, Yokohama, JP;
Hiroaki Yoda, Sagamihara, JP;
Eiji Kitagawa, Yokohama, JP;
Masatoshi Yoshikawa, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A magnetic memory includes a magnetoresistive effect device comprising: a first ferromagnetic layer that has magnetic anisotropy in a direction perpendicular to a film plane thereof; a first nonmagnetic layer that is provided on the first ferromagnetic layer; a first reference layer that is provided on the first nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, has magnetization antiparallel to a magnetization direction of the first ferromagnetic layer, and has a film thickness that is 1/5.2 to 1/1.5 times as large as a film thickness of the first ferromagnetic layer in the direction perpendicular to the film plane; a second nonmagnetic layer that is provided on the first reference layer; and a storage layer that is provided on the second nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, and has a magnetization direction varied by spin-polarized electrons caused by flowing the current to the magnetoresistive effect device.