The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2012
Filed:
Oct. 31, 2007
Yan-home Liu, Hsinchu County, TW;
Yung-chieh Kuo, Hsin-Chu Hsien, TW;
Yi-ham Tsou, Miaoli County, TW;
Jeng-ho Wang, Hsin-Chu, TW;
Cheng-wei Chen, Taichung County, TW;
Hsin-yi LU, Taipei, TW;
Yan-Home Liu, Hsinchu County, TW;
Yung-Chieh Kuo, Hsin-Chu Hsien, TW;
Yi-Ham Tsou, Miaoli County, TW;
Jeng-Ho Wang, Hsin-Chu, TW;
Cheng-Wei Chen, Taichung County, TW;
Hsin-Yi Lu, Taipei, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A reworking method for integrated circuit devices includes the following: providing a substrate having a first base layer and a first dielectric layer formed thereon, performing a first dry etching process to remove the first dielectric layer, performing a CMP process to remove the first base layer, and sequentially reforming a second base layer and a second dielectric layer on the substrate. When certain layers on the IC device have hailed an inspection or when quality defects are found, the defective layer is removed according to the provided reworking method.