The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2012
Filed:
Oct. 18, 2010
Yuan-tien Tu, Puzih, TW;
Tsai-chun LI, Hsinchu, TW;
Huan-just Lin, Hsinchu, TW;
Shih-chang Chen, Hsinchu, TW;
Yuan-Tien Tu, Puzih, TW;
Tsai-Chun Li, Hsinchu, TW;
Huan-Just Lin, Hsinchu, TW;
Shih-Chang Chen, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a layer over a substrate. The method includes forming a first opening in the layer that exposes a first region of the substrate. The method includes removing a first oxidation layer formed over the first region through a first sputtering process. The method includes filling the first opening with a conductive material. The method includes forming a second opening in the layer that exposes a second region of the substrate, the second region being different from the first region. The method includes removing a second oxidation layer formed over the second region through a second sputtering process. One of the first and second sputtering processes is more powerful than the other.