The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2012
Filed:
Sep. 25, 2009
Da-yuan Lee, Jhubei, TW;
Jian-hao Chen, Hsinchu, TW;
Chi-chun Chen, Kaohsiung, TW;
Matt Yeh, Hsinchun, TW;
Hsing-jui Lee, Hsinchu, TW;
Da-Yuan Lee, Jhubei, TW;
Jian-Hao Chen, Hsinchu, TW;
Chi-Chun Chen, Kaohsiung, TW;
Matt Yeh, Hsinchun, TW;
Hsing-Jui Lee, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure provides a method that includes forming first and second gate structures over first and second regions, respectively, removing a first dummy gate and first dummy dielectric from the first gate structure thereby forming a first trench and removing a second dummy gate and second dummy dielectric from the second gate structure thereby forming a second trench, forming a gate layer to partially fill the first and second trenches, forming a material layer to fill the remainder of the first and second trenches, removing a portion of the material layer such that a remaining portion of the material layer protects a first portion of the gate layer located at a bottom portion of the first and second trenches, removing a second portion of the gate layer, removing the remaining portion of the material layer from the first and second trenches.