The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2012
Filed:
Jun. 01, 2009
Satoru Takasawa, Sammu, JP;
Masaki Takei, Sammu, JP;
Hirohisa Takahashi, Sammu, JP;
Hiroaki Katagiri, Sammu, JP;
Sadayuki Ukishima, Sammu, JP;
Noriaki Tani, Sammu, JP;
Satoru Ishibashi, Sammu, JP;
Tadashi Masuda, Tomisato, JP;
Satoru Takasawa, Sammu, JP;
Masaki Takei, Sammu, JP;
Hirohisa Takahashi, Sammu, JP;
Hiroaki Katagiri, Sammu, JP;
Sadayuki Ukishima, Sammu, JP;
Noriaki Tani, Sammu, JP;
Satoru Ishibashi, Sammu, JP;
Tadashi Masuda, Tomisato, JP;
Ulvac, Inc., Chigasaki-shi, JP;
Abstract
A wiring film having excellent adhesion and barrier property and a low resistance value is formed. An oxygen gas is introduced into a vacuum chamber in which an object to be film formed is disposed; a sputtering target is sputtered in a vacuum ambience containing oxygen; and a first metallic film is formed on a surface of the object to be film formed. The first sputtering target includes copper as a major component and at least one kind of additive elements selected from an additive element group consisting of Mg, Al, Si, Be, Ca, Sr, Ba, Ra, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb and Dy. Thereafter, a second metallic film is formed on a surface of the first metallic film by sputtering the sputtering target in a state in which the introduction of the oxygen gas into a vacuum ambience is stopped, and then a wiring film is formed by etching the first and second metallic films.