The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2012
Filed:
Aug. 26, 2009
Wagdi W. Abadeer, Jericho, VT (US);
Kiran V. Chatty, Williston, VT (US);
Robert J. Gauthier, Jr., Hinesburg, VT (US);
Jed H. Rankin, Richmond, VT (US);
William R. Tonti, Essex Junction, VT (US);
Yun Shi, South Burlington, VT (US);
Wagdi W. Abadeer, Jericho, VT (US);
Kiran V. Chatty, Williston, VT (US);
Robert J. Gauthier, Jr., Hinesburg, VT (US);
Jed H. Rankin, Richmond, VT (US);
William R. Tonti, Essex Junction, VT (US);
Yun Shi, South Burlington, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A field effect transistor (FET) that includes a drain formed in a first plane, a source formed in the first plane, a channel formed in the first plane and between the drain and the source and a gate formed in the first plane. The gate is separated from at least a portion of the body by an air gap. The air gap is also in the first plane.