The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 03, 2012

Filed:

Sep. 10, 2010
Applicants:

Hsien-wei Chen, Sinying, TW;

Jian-hong Lin, Yunlin, TW;

Tzu-li Lee, Yunlin, TW;

Inventors:

Hsien-Wei Chen, Sinying, TW;

Jian-Hong Lin, Yunlin, TW;

Tzu-Li Lee, Yunlin, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01);
U.S. Cl.
CPC ...
Abstract

An interconnect structure of an integrated circuit having improved reliability and a method for forming the same are provided. The method includes providing a substrate, forming a dielectric layer overlying the substrate, performing a first shrinking process, wherein the dielectric layer shrinks and has a first shrinkage rate, forming a conductive feature in the dielectric layer after the step of performing the first shrinking process, and performing a second shrinking process after the step of forming the conductive feature, wherein the dielectric layer substantially shrinks and has a second shrinkage rate.


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